Tunneling anisotropic magnetoresistance effect in a p<sup>+</sup>‐(Ga,Mn)As/n<sup>+</sup>‐GaAs Esaki diode
M. CiorgaExperimentelle und Angewandte Physik, Universität Regensburg, Universitätsstraße 31, 93040 Regensburg, GermanyA. EinwangerExperimentelle und Angewandte Physik, Universität Regensburg, Universitätsstraße 31, 93040 Regensburg, GermanyJ. SadowskiInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, PolandW. WegscheiderExperimentelle und Angewandte Physik, Universität Regensburg, Universitätsstraße 31, 93040 Regensburg, GermanyD. WeißExperimentelle und Angewandte Physik, Universität Regensburg, Universitätsstraße 31, 93040 Regensburg, Germany
2006en
ABI
Annotatsiya
Abstract We have performed magnetotransport experiments on p + ‐(Ga,Mn)As/n + ‐GaAs Esaki diode devices. The spin‐valve‐like signal was observed in these devices in an in‐plane magnetic field configuration due to Tunneling Anisotropic Magnetoresistance effect. The pattern of the observed magnetic reversal process strongly depends on the observed magnetic anisotropy of the (Ga,Mn)As layer – depending on its type the sign of the spin‐valve‐like signal can be changed by a simple rotation of the magnetic field by 90° or not. The type of the anisotropy is found to be strongly shaped, in a random way, during processing of the wafer. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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