Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: DEFECTS IN AMORPHOUS Si:H — THE REHYBRIDIZED TWO-SITE (RTS) MODEL

1. New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

   Zokirkhon M. Khakimov

   MaqolaThin-Film Transistor TechnologiesMRS Proceedings19980 iqtibos

   ABIABI:AkademIndex/1998.article.000275

2. New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

   Zokirkhon M. Khakimov

   MaqolaSilicon and Solar Cell TechnologiesMRS Proceedings19980 iqtibos

   ABIABI:AkademIndex/1998.article.000320