Advanced photonic crystal materials and nanophotonic devices for quantum technologies, optical sensing, and integrated photonic systems

Combining photonic crystal materials with nanophotonic devices is a big step forward for quantum technologies, optical sensing, and integrated photonic systems. This study examines the design, fabrication, and testing of advanced photonic crystal structures optimised for enhanced light-matter interactions across various application domains. We demonstrate diamond-based slow-light photonic crystal waveguides featuring group indices reaching 70. This allows silicon-vacancy colour centers to give off broadband Purcell-enhanced light, which can be used in quantum memory applications. We also show a photonic crystal sensor architecture that uses porous silicon multilayers and has a linearly graded width. This sensor has an average sensitivity of 786 nm/RIU and a detection limit of 7.21×10-3 RIU. This is 34% better than reference structures that aren't graded. We examine various methods for integrating III-V materials with silicon platforms in integrated photonic systems to facilitate the fabrication of quantum photonic integrated circuits at a wafer scale. The method of making the 50-nm-scale air-hole arrays with vertical sidewall profiles that are important for reducing optical losses uses reactive-ion-beam etching with the best settings (ion accelerating voltage of 330 V, Cl2 pressure of 5×10-4 Torr). The finite-difference time-domain analysis simulations confirm the experimental results, which show that optimised cavity designs have quality factors greater than 105 . These improvements make a full framework for the next generation of photonic technologies that link basic quantum optics to real-world devices.

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