CsPbI₃ asosidagi perovskit quyosh elementlarining samaradorligini tadqiq etish

In this work, the photovoltaic parameters of CsPbI₃ perovskite solar cells were investigated by controlling the thermal annealing temperature and the layer thickness. The CsPbI₃ perovskite active layers were prepared from a 0.3 M solution of CsI and PbI₂ (1:1 molar ratio) in MAAc by one-, two-, three- and four-cycle spin coating. The thermal annealing temperature of the CsPbI₃ layer was varied in the range of 90–120 °C, and the layer thickness was controlled by depositing the perovskite active layer several times by spin coating. This approach made it possible to systematically assess the effect of the number of spin-coated perovskite layers and the thermal treatment temperature on the photovoltaic performance of CsPbI₃ perovskite solar cells.

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