The effective mass of electrons in (InSb)_x·(InTe)_1−x crystals

Abstract Measurements of the thermoelectric power, transverse Nernst‐Ettinghausen effect, conductivity, and Hall effect allow the concentration and temperature dependence of the electronic effective mass m * to be calculated for crystals of the solid solution (InSb) x (InTe) 1—x (for × = 1 to 0.85) in the temperature range 100 to 370 °K. Solid solutions having × > 0.99 (I) behave like InSb doped with tellurium, and crystals of this type having electron concentrations ( n ) greater than 2 × 10 18 cm −3 show an m * ( n ) dependence which differs from that predicted by Kane. Solid solutions with x ≦ 0.99 (II) show a different temperature dependence of m * from those with x > 0.99.

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