The resistive state of thin tin films during the destruction of superconductivity by current
L. E. MusirenkoPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSRV. I. ShnyrkovPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSRV. G. VolotskayaPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSRI. M. DmitrenkoPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR
ABI
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The mechanism for the destruction of the superconductivity of thin films in a zero magnetic field is investigated. It is shown that in the range of temperatures close to the critical temperature T/Tc∼1÷0.99 the first derivatives of the smooth current-voltage characteristics are oscillatory in character. It is assumed that the cause of the oscillations is the development of a dynamic structure having alternating normal and superconducting regions in the sample.
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