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Some new properties of the volt-ampere characteristics of bismuth in strong crossed fields

Yu. A. BogodPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSRР. Г. ВалеевPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSRG. P. OnokienkoPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR

Soviet Journal of Low Temperature Physicsjournal1975en

ABI

Annotatsiya

For the first time the volt-ampere characteristics of bismuth have been studied in electric fields of up to 350 V/cm. The magnetic field range is 20–190 kOe, and the experiments are conducted at liquid-helium and hydrogen temperatures. It is observed that under certain conditions the volt-ampere characteristics have two portions with a negative differential conductivity. In the postcritical region of E it is found that the differential and absolute resistances have a nonmonotonic dependence on the magnetic field. It is shown that the transition to the phonon generation regime is not uniquely determined by the drift velocity of the charge carriers and that the critical value of the electric field depends on the temperature and magnetic field.

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Mavzular

Semiconductor materials and interfaces Thermodynamic and Structural Properties of Metals and Alloys Semiconductor Quantum Structures and Devices

Identifikatorlar

DOI: 10.1063/10.0029053

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