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Critical currents of thin films and their relation to inhomogeneities of superconductor parameters

A. A. MoshenskiĭPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSRN. Ya. Fogel’Physicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSRA. S. SidorenkoPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSRA. M. GlukhovPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSRI. M. DmitrenkoPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSRL. P. TishchenkoPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSRYa.M. FogelPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR
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The influence of implanting helium ions on the critical current of thin indium films in a perpendicular magnetic field is investigated. The critical current in a mixed state diminishes, as a rule, with an increase in the exposure dosage in the weak magnetic field range Hcr1≪H≪Hcr2. The dependences observed experimentally of the critical current on the temperature, magnetic field, and exposure dose are described well by the Larkin-Ovchinnikov theory which takes account of the influence of spatial inhomogeneities in the mean free path l and the interelectron interaction constant g on the critical current. It follows from a comparison with theory that a vortex lattice is realized in the films investigated, where the shear modulus C66 of the vortex lattice in the film changes with a reduction in temperature because of the change in sign of the inequality between the vortex lattice parameter and the effective penetration depth. A comparison between experimental results and theory also permits making the deduction that indium films become more homogeneous because of exposure.

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