Electronic structure of gallium under pressure
А. А. ГалкинDonets Physicotechnical Institute, Academy of Sciences of the Ukrainian SSRA. I. PopovichDonets Physicotechnical Institute, Academy of Sciences of the Ukrainian SSRE. P. DegtyarDonets Physicotechnical Institute, Academy of Sciences of the Ukrainian SSRV. Y. VitchinkinDonets Physicotechnical Institute, Academy of Sciences of the Ukrainian SSRL. T. PisarevDonets Physicotechnical Institute, Academy of Sciences of the Ukrainian SSR
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The dependence of the extremal cross-sectional areas Sextr of some bands of the Fermi surface on quasihydrostatic pressure is investigated using the magnetoacoustic method and high pressure techniques. New data for Sextr (P) are obtained which depend on the degree of hydrostaticity of the medium transmitting pressure to the sample. The results suggest that a topological Lifshits transition occurs in gallium at a pressure P∼ 1 kbar.
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