Backscattering measurements of postimplantation damage profiles in silicon single crystals

Silicon single crystals, implanted by He+, B+, Si+, and Ag+ ions, are investigated by the backscattering-channelling method. Alpha particles accelerated in the INP C-48 cyclotron to 1.4 MeV are used. In order to obtain the radiation damage depth distribution backscattering yields are analysed by single, multiple, and plural scattering. It is shown that plural scattering provides the most reasonable results and this scattering mode is therefore applied to analyse all the experimental data. [Russian Text Ignored].

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