Superconducting properties of V/AI–Al<i>x</i>O<i>y</i>–Pb tunnel junctions

Vanadium-based junctions with aluminum oxide barriers are experimentally investigated. The characteristics of such junctions are shown to be close to ideal. A dependence of the broadening of the single-particle current jump on the ratio of the coherence length ξ(T) to the vanadium film thickness is observed. It is shown that the suppression of the order parameter at the vanadium film surface is caused by its oxides. It is experimentally confirmed that the dip in the density of states above the gap is caused by the normal layer at the superconductor surface.

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