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Theory of saturation in a semiconductor with a large carrier recombination frequency

L. I. GlazmanPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kovV. M. TsukernikPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kov
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We consider the optical pumping in a semiconductor when the energy of electrons introduced into the conduction band by light is smaller than the frequency of optical phonons. In this case, the inequality vR≫vϵ can also hold, where vR is the recombination frequency, and vϵ is the energy relaxation frequency of the carriers inside the band. We find the linear response to the low-frequency field and the photoconductivity of the semiconductor under saturation conditions for vϵ = 0, and calculate the correction to the stationary distribution function due to phonon scattering for vϵ ≪ vR.

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