Multiple Scattering of Relativistic Electrons under Axial Channeling ina Crystal Model of the Lattice of the Atomic Rows

Abstract Using computer simulation and the lattice model of atomic rows the evolution of the ultrarelativistic electron flux under channeling in the <111> direction in a silicon crystal due to multiple scattering by crystal electrons and nuclei is investigated. It is shown that the electron subtrapping in the bound states takes place in the crystal volume together with the electron dechanneling from the bound states with the atomic rows. A fraction of the particles undergoing the volume trapping is singled out for the first time, and its thickness and orientational dependences are obtained.

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