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Effect of a diffusing layer of impurities on the electrical conductivity of thin metallic plates

Yu. A. KolesnichenkoPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kov
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A new method for measuring the coefficient of diffusion D of impurities in metals with the help of size effects in the electrical conductivity of thin samples is proposed. The dependence of the conductivity of single-crystalline plates on the orientation and magnitude of the magnetic field H (including the case H = 0) in the presence of a diffusing layer of impurities at one of the surfaces is studied theoretically. It is shown that the change in the conducting properties of the sample after diffusive annealing enables determining the coefficient D with high accuracy. The effect of the truncation of the electron trajectories in the impurity layer on the form and position of the lines of transverse focusing is analyzed.

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