Computer Simulation of Current–Voltage Characteristics in Amorphous Silicon p–n Diode Structures under Impurity Photoexcitation

A computer simulation of the space-charge generation-recombination currents in a-Si:H arid a-Si:F diode structures under impurity photoexcitation is carried out. The gap state distribution function experimentally determined in a-Si:H and a-Si:F is immediately used in the calculations. It is shown that the application of the “U” as well as of the “shifted U” gap state distribution function leads to a appreciable underestimation of dark generation-recombination currents as well as to a considerable overestimation of the photovoltaic performance of the structure. [Russian Text Ignored].

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