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Ish: Ion bombardment effect on Si homoepitaxial growth from ion molecular beams
Физика и техника полупроводников
в.а. Спектр осцилляций де-Гааза-ван-Альфена резко
Maqola198311 iqtibosABIEpitaxial growth of silicon assisted by ion implantation
Tadatsugu Itoh, Tohru Nakamura
Maqola19713 iqtibosABI