Smearing of resistive transitions in thin superconducting films of transition metals in a parallel magnetic field
V. G. CherkasovaPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kovL. P. TishchenkoPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kovN. Ya. Fogel’Physicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kov
ABI
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Resistive junctions of thin superconducting films of transition metals (vanadium, niobium) in a parallel magnetic field in the region of strong fluctuations of the order parameter were studied. It was found that near Tc0 the width of the transitions decreases according to the law ΔH‖∼(1−T/Tc0)−1/2, while the magnetic Ginzburg number GiH‖ = [H − Hc‖(T)]/Hc‖(T), characterizing the width of the critical region for a phase transition in a parallel field is proportional to the inverse electron mean-free path length. The results obtained are explained on the basis of the fluctuation theory for two-dimensional superconductors.
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