Peculiarities of resistive transitions in metal—semiconductor granular systems
L. I. GlazmanPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, KharkovA. M. GlukhovPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, KharkovI. M. DmitrenkoPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, KharkovV. L. TovazhnyanskiiPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, KharkovI. Ya. Fogel’Physicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Kharkov
ABI
Annotatsiya
Superconducting transitions are studied in granular Sn–Ge films that can be regarded as an island of tin condensate enclosed in an amorphous germanium matrix. The shape of the R vs. T transition curves is analyzed for a series of samples whose resistance Rn at 4.2 K ranges between 500 and 18,000 Ω. It is shown that the superconducting transition curves can be correctly interpreted with the help of the percolation model. The effect of the transport current I on resistive transitions is studied both theoretically and experimentally. According to the percolation model, the correction ΔR to the resistance R(T) is proportional to I and T−1. The results of experiments confirm these conclusions.
Hali tarjima qilinmagan
Mavzular
Identifikatorlar
Iqtiboslar va manbalar
0 ta iqtibos13 ta foydalanilgan manba