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Nonlinear excitations under low-temperature excitation of high-amplitude vibrations in crystals containing dislocations

P. P. Pal‐ValPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Kharkov Academy of Sciences of the German Democratic Republic, BerlinH KaufmannPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Kharkov Academy of Sciences of the German Democratic Republic, Berlin

Soviet Journal of Low Temperature Physicsjournal1987en

ABI

Annotatsiya

The resonance characteristics of silicon single crystals have been investigated at 5.9° K near the frequency of the main resonance of a quartz-sample system. The asymmetry and hysteresis of the resonance peak, which were observed in the region of high-amplitude vibrations and were accompanied by a substantial decrease in the resonance frequency and an abrupt change in the amplitude of the vibrations, are attributed to the nonlinear nature of the dislocation motion in the internal-stress fields of the crystal.

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Mavzular

Electromagnetic Effects on Materials Material Properties and Failure Mechanisms Microstructure and mechanical properties

Identifikatorlar

DOI: 10.1063/10.0031721

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