Ushbu ish iqtibos qilgan ishlar

6 ta ish

Ish: Influence of the AsH3 inlet pressure on the growth of epitaxial gallium arsenide layers in the GaCl-AsH3-H2 system. Range of orientation (115)A-(001)-(115)B

1. GaAs growth by vapour phase transport

   R. Cadoret, L. Hollan, J.B. Loyau +2

   Maqola19754 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.658994

2. Epitaxial GaAs Kinetic Studies: {001} Orientation

   Don W. Shaw

   Maqola19702 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.658997

3. A theoretical treatment of GaAs growth by vapour phase transport for {001} orientation

   R. Cadoret, M. Cadoret

   Maqola19752 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.659000

4. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.669131

5. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.669132

6. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.669133