The role of electronic topological transitions in orbital magnetism of indium
S. A. VorontsovPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, KharkovI. V. SvechkarevPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Kharkov
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The contribution to the orbital magnetic susceptibility of indium from the states of the electronic β-ring in the third energy band is calculated. A comparison with experimental results for the In–Cd and In–Pb alloys makes it possible to explain the observed behavior of diamagnetism as a manifestation of an electronic topological transition associated with the rupture of the β-ring near the symmetry point T of the Brillouin zone at cadmium concentration 0.7 ± 0.1 at. %.
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