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Photochemical Reorganization of Deep Impurity Centres in Silicon. Dissociation of Donor–Acceptor Pairs

K. A. AdilovSpecialized Design Office with Pilot Production of Thermal Physics Department, Academy of Sciences of the Uzbek SSR, Taskent
physica status solidi (b)journal1991en
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Abstract Reversible processes are observed of photochemical reorganization of deep centres in p‐type silicon doped with zinc, selenium, and chromium under the illumination of light in the impurity absorption region. The dissociation is found of donor–acceptor pairs (Zn + i B − s , (Se + i B − s )°, and (Cr + i B − s )° followed by isolated centres of Zn + i and Se + s .

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