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Electrical properties of p-type ZnGeP2 irradiated by H+ ions

V. N. Brudnyı̆V. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskV. A. NovikovV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk

Russian Physics Journaljournal1991en

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Mavzular

Semiconductor materials and interfaces Chalcogenide Semiconductor Thin Films

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DOI: 10.1007/bf00898592

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