Thin films of bismuth-antimony alloy with a dielectric coating of variable thickness
S. Sh. AkhmedovS. M. Umarov Physicotechnical Institute, Tajikistanian Academy of Sciences, DushanbeN. B. BrandtM. V. Lomonosov State University, MoscowK. N. KashirinS. M. Umarov Physicotechnical Institute, Tajikistanian Academy of Sciences, DushanbeE. I. ShvedkovPhysicotechnical Institute
ABI
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Semiconducting films of the alloy Bi–Sb (containing 11% Sb) and Bi films of a fixed thickness (300, 600, 900, 1200, 1500 Å) with a thin insulating layer of variable thickness (20–4 500 Å) (silicon dioxide, lithium fluoride) are investigated. An oscillating dependence of the resistance of films on the thickness of the insulating coating is observed.
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