Temperature dependence of the resistivity of systems with heavy fermions

We propose on the basis of a two-band model of heavy-fermion systems a nonmagnetic mechanism for the nonlinear temperature dependence of the resistivity. The mechanism is based on the competition between the temperature–induced increase in the intensity of electron-phonon scattering and the decrease in the effective carrier mass on the Fermi surface as a result of the strong temperature dependence of the chemical potential. The qualitative form of the basic types of experimental curves ρ(T) as a function of the parameters of the system (width of the narrow band, interband hybridization potential, position of the Fermi level, and intensity of electron-phonon and electron-impurity interactions) is reporduced correctly.

Hali tarjima qilinmagan