Quantum corrections to the temperature dependence of the conductivity of bismuth films in a strong electric field. 1. Localization correction

The temperature variation of quantum correction to the conductivity of thin (∼100 Å) Bi films, associated with weak localization of electrons under conditions of electron overheating, is studied. It is found that the localization correction decreases in strong currents due to an increase in the electron temperature. No direct effect of the electric field E on the localization correction is observed (at least in fields E ≲ 20 V · cm−1). It is found that, for electron overheating described by two different temperatures Te (electron) and Tph (phonons), the electron temperature has a decisive influence on the localization correction under these conditions.

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