Traveling helical wave amplifier for superhigh frequencies on the base of a semiconductor containing deep impurity levels

A theory is presented of helical density waves in an electron–hole plasma of semiconductors containing deep impurity levels (traps). The results obtained show that the use of ultrafast trapping and release processes of non-equilibrium current carriers by deep impurity levels allows to solve the topical problem as to the creation of a solid state traveling wave amplifier for superhigh frequencies. The expressions for the phase velocity and the growth constant of the traveling helical wave as well as the threshold conditions are found for a cylindrical semiconductor containing a deep impurity level with different trapping frequencies for electrons and holes. As an example the results of the numerical computation of parameters of the traveling helical wave amplifier of germanium containing a deep impurity level are given and a maximum amplification of about 2100 dB/m is predicted. [Russian Text Ignored]

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