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Low Temperature Phase Transition (Pt) and Defect Formation (Df) in Silicon with Dioxide Inclusions Under X-Ray Irradiation

Sh. MakhkamovInstitute of Nuclear Physics, Uzbekistan Academy of Sciences, Tashkent, 702132, UzbekistanS. N. AbdurakhmanovaInstitute of Nuclear Physics, Uzbekistan Academy of Sciences, Tashkent, 702132, Uzbekistan

MRS Proceedingsjournal1995en

ABI

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Mavzular

Silicon and Solar Cell Technologies Thin-Film Transistor Technologies Silicon Nanostructures and Photoluminescence

Identifikatorlar

DOI: 10.1557/proc-396-775

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