Kinetics of critical currents, superconducting transition temperature, and electrical conductivity of normal state for photoelectric irradiation of an epitaxial film of YBa2Cu3O6+<i>x</i>

Time dependences of the critical current Ic, superconducting transition temperature Tc, and the normal conductivity σ are measured in an epitaxial superconducting metaloxide film of YBa2Cu3O6.5 during detailed irradiation. It is shown that the kinetics of σ, Tc, and Ic are formed by two processes whose time constants differ by an order of magnitude. The rapid process is associated with increasing number of hole carriers, while the slow process is associated with the ordering of oxygen in the CuOx plane for a constant number of carriers. This process affects the movement of carriers in the CuO2 plane through the potential relief produced in it by the impurity charges from the CuOx plane. Only the slow process is manifested in the kinetics of the critical temperature Tc, which explains the direct connection between the high-temperature superconductivity and the potential relief. It is shown that the basic mechanism of confinement of critical current in YBa2Cu3O6+x films is connected with weak bonds formed in the region with a reduced electric transparency.

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