Maqola

Temperature dependence of the electrical properties of polycrystalline silicon in the dark and in sunlight

K. M. DoshchanovPhysicotechnical Institute Science and Industrial Union “Physics-Sun,”, Uzbekistan Academy of Sciences, 700084, Tashkent, Uzbekistan

Semiconductorsjournal1997en

ABI

Annotatsiya

The electric resistance and effective carrier mobility in polycrystalline silicon are calculated as functions of temperature and the photoexcitation level. The theoretical results are in agreement with existing experimental data.

Mavzular

Thin-Film Transistor Technologies Silicon and Solar Cell Technologies Silicon Nanostructures and Photoluminescence

Identifikatorlar

DOI: 10.1134/1.1187258

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