Observation of a negative characteristic temperature for the threshold current of diode lasers for the 2.8 /gmm spectral range
А. А. ПоповA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgV. V. SherstnevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgYu. P. YakovlevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgS. TsivishA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgZdeněk ZelingerJ. Heyrovsky Institute of Physical Chemistry, 18223, Prague 8, Czech Republic
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A decrease in the lasing threshold with increasing temperature has been observed in InAs/InAsSbP laser heterostructures for the 2.7–2.9 μm spectral range at cryogenic temperatures (T=32–85 K). At temperatures below 50 K a negative characteristic temperature, T 0=−70 K, was obtained for the threshold current. Characteristics of the temperature dependence of the threshold current and the laser output power were investigated.
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