Mesa stripe for the 3–3.6 μm range lasers utilizing gadolinium-doped InAsSbP/InGaAsSb double heterostructures
N. V. ZotovaA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgS. A. KarandashevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgB. A. MatveevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgM. A. RemennyĭA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgN. M. Stus’A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,G. N. TalalakinA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
ABI
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Data are presented on diode mesa stripe lasers utilizing InAsSbP/InGaAsSb double heterostructures, which are the first long-wavelength lasers to be doped with the rare-earth element gadolinium. It is shown that doping enhances the threshold characteristics. Measurements made of the current modulation of the laser radiation indicate that these lasers may be used in spectroscopic measurements.
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