“Semiconductor-metal” conductivity phase transition temperature in chalcogenide glassy semiconductors and overheating effect
É. A. LebedevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgK. D. TséndinA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
ABI
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It is shown that thin films of chalcogenide glassy semiconductors may repeatedly withstand short-term heating to temperatures substantially in excess of the “semiconductor-metal” transition temperature and the melting point Tm without being damaged.
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