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Influence of uniaxial compression on the photoconductivity of highly compensated Si〈B, Mn〉

М. К. БахадырхановTashkent State Technical University, TashkentХ. М. ИлиевTashkent State Technical University, TashkentKh. F. ZikrillaevTashkent State Technical University, Tashkent

Technical Physics Lettersjournal1998en

ABI

Annotatsiya

It was observed that the photosensitivity limit and the increase in the photoresponse depend fairly strongly on uniaxial elastic deformation in compensated Si〈B, Mn〉 crystals.

Mavzular

Semiconductor materials and interfaces Magnetic Properties and Applications Microstructure and mechanical properties

Identifikatorlar

DOI: 10.1134/1.1262299

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