Fabrication of regular three-dimensional lattices of submicron silicon clusters in an SiO2 opal matrix
V. N. BogomolovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgВ. Г. ГолубевA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgН. Ф. КартенкоA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgD. A. KurdyukovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgА. Б. ПевцовA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. V. Prokof’evA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,В. В. РатниковA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgН. А. ФеоктистовA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgН. В. ШаренковаA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
ABI
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Silicon is now the most important material in modern solid-state electronics. Regular systems of silicon nanoclusters containing up to 1014 cm−3 elements were obtained in a sublattice of opal (SiO2) voids. By using three-dimensional dielectric matrix-carriers similar to opal, it may be possible to obtain three-dimensional ensembles of semiconductor nanodevices. Various parameters of these “opal-silicon” nanocomposites were measured.
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