Influence of accidental impurities and defects on the low-frequency dielectric relaxation in the ferroelectric Cd2Nb2O7
Н. Н. КолпаковаA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgM. WiesnerA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. O. LebedevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgП. П. СырниковA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgV. A. KhramtsovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
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It is shown that accidental impurities and structural defects (cation vacancies) formed in the (CdO8) n−2 sublattice during synthesis enhance the relaxation properties of the system near T Curie and suppress the ferroelectric phase transition.
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