Multiwell laser heterostructures fabricated by liquid-phase epitaxy
A. Yu. LeshkoA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. V. LyutetskiĭA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. V. MurashovaA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgN. A. PikhtinA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgI. S. TarasovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgИ. Н. АрсентьевA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,B. Ya. BerA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgYu. A. KudryavtsevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgYu. V. Il’inA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,N. V. FetisovaA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
ABI
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A methodology has been developed for growing InGaAsP/InP multiwell laser heterostructures by liquid-phase epitaxy. Depth profiling using a secondary ion mass spectrometer was used to investigate the distribution profiles of the composition of multiwell laser heterostructures. Liquid-phase epitaxy was used to fabricate InGaAsP/InP multiwell laser heterostructures with active regions having emission wavelengths of 1.3 and 1.55 μm and their radiative characteristics were studied.
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