Investigation of strained InxGa1−xAs/InP quantum wells fabricated by metalorganic compound hydride epitaxy
A. D. BondarevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgD. A. VinokurovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgV. A. KapitonovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgO. V. KovalenkovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgZ. N. SokolovaA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgI. S. TarasovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
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An investigation was made of the possibility of using reduced-pressure MOC hydride epitaxy to fabricate highly strained (compressive stress) InxGa1−x As/In0.53Ga0.47As quantum wells on indium phosphide (100) substrates. The photoluminescence properties of these heterostructures were investigated. It was shown that these heterostructures are potentially useful for laser diodes emitting in the 1.5–2 μm range, which is important for environmental monitoring.
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