Theoretical description of high-temperature implantation of silicon carbide with N+ and Al+ ions

A theoretical analysis is made of the evolution of the defect structure in silicon carbide (6H-SiC) implanted with N+ and Al+ ions of various energies. Satisfactory agreement was achieved between the calculated defect distributions and the experimental data. The following kinetic parameters of silicon carbide were estimated numerically: the migration energy of interstitial silicon atoms and the recombination parameters of vacancies and interstitial sites in the carbon and silicon subsystems.

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