Modified method of plasma-enhanced chemical vapor deposition of nanocrystalline silicon
V. G. GolubevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgА. В. МедведевA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgА. Б. ПевцовA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgН. А. ФеоктистовA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
ABI
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A modified plasma-enhanced chemical vapor deposition technology is developed for nanocrystalline Si which combines the standard rf glow discharge method and the hollowcathode discharge method in a single process cycle. The volume fraction of nanocrystallites varied monotonically along the layer, whereas their size remained constant. The electrical and optical characteristics of these films were investigated.
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