Asosiy kontentga oʻtish
AkademIndex

Mahsulotlar

Ishlab chiquvchilar uchun

AkademBaseEkotizim uchun ochiq API
Maqola

Emissive characteristics of mesa-stripe lasers (λ=3.0–3.6 μm) made from InGaAsSb/InAsSbP double heterostructures

M. AidaralievA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgN. V. ZotovaA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgS. A. KarandashevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgB. A. MatveevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgM. A. RemennyĭA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgN. M. Stus’A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,G. N. TalalakinA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
Technical Physics Lettersjournal1998en
ABI

Annotatsiya

The directional patterns, current-voltage characteristics, and spectral characteristics of mesastripe lasers with InGaAsSb active layers, emitting at λ=3.0–3.6 μm (77 K) and having threshold currents ≥15 mA (j th≥200 A/cm2), are investigated. The maximum output power is 1.4 mW (λ∼3.3 μm), the differential quantum efficiency ∼3%(τ=5–30 μs, f=500 Hz) for lasing in a longitudinal mode with beam divergences ΔΘ∥∼15° and ΔΘ ⊥ ∼30°. The relationship of the differential quantum efficiency to the order of the spatial mode of the lasing is demonstrated. A single-mode, current-tunable (−30 cm−1/A) laser is used to measure the transmission of methane in the region of the ν 3 absorption band.

Hali tarjima qilinmagan

Mavzular

Identifikatorlar

Iqtiboslar va manbalar