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28 ta ish

Ish: New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

  1. Molecular-dynamics study of defect formation in<i>a</i>-Si:H

    Young K. Park, Charles W. Myles

    Maqola19952 iqtibos
    ABI

  2. Ab initio pseudopotential calculations of point defects and boron impurity in silicon

    Jing Zhu, Lin Yang, C. Mailhiot +2

    Maqola19952 iqtibos
    ABI

  3. <i>Ab initio</i>calculations on metastable defects in a-Si:H: The Staebler-Wronski effect

    R. Jones, G M S Lister

    Maqola19902 iqtibos
    ABI