Radiation defects in semiconductors under hydrostatic pressure
Annotatsiya
The effect of hydrostatic pressure on the sensitivity of the electrical properties of irradiated semiconductors as functions of the position of the Fermi level in the band gap of the crystal has been investigated. A numerical analysis of the experimental data has been performed. This analysis is based on a model of the crystal as having an isotropic band gap 〈E G〉, where 〈E G〉 is the average energy interval between the conduction band and the valence band. It is shown that varying the pressure results in hardly any change in the position of the radiation defect levels relative to the energy corresponding to the center of the isotropic gap 〈E G〉/2, which is identical to the value of the “limiting” position of the Fermi level (F lim) in an irradiated semiconductor.