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Hydrogenation and annealing effects on the trapping times of the minority carriers in In-doped CdTe epitaxial layers grown on p-CdTe (211) substrates

Sh. U. YuldashevDepartment of Physics, Dongguk University, 3-26, Pildong, Chungku, Seoul 100-715, KoreaIgor L. BolotinDepartment of Physics, Dongguk University, 3-26, Pildong, Chungku, Seoul 100-715, KoreaY. B. HouDepartment of Physics, Dongguk University, 3-26, Pildong, Chungku, Seoul 100-715, KoreaJ. H. LeemDepartment of Physics, Dongguk University, 3-26, Pildong, Chungku, Seoul 100-715, KoreaH. C. JeonDepartment of Physics, Dongguk University, 3-26, Pildong, Chungku, Seoul 100-715, KoreaT. W. KangDepartment of Physics, Dongguk University, 3-26, Pildong, Chungku, Seoul 100-715, KoreaT. W. KimDepartment of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea

Journal of Applied Physicsjournal1999en

ABI

Annotatsiya

Photoconductivity (PC) measurements on as-grown, annealed, hydrogenated, and hydrogenated and annealed In-doped CdTe epitaxial films grown on p-CdTe (211) substrates by molecular beam epitaxy have been performed in order to investigate the behavior of the trapping times of minority carriers in In-doped CdTe films due to annealing and hydrogenation. The results of the PC decay curve showed a slow component with a time constant of a few milliseconds and this behavior was related to the existence of deep trap levels corresponding to minority carriers. The activation energies of the traps, as determined from the temperature dependence of the PC decay times, were (Ev+0.35) and (Ev+0.43) eV for the as-grown and hydrogenated In-doped CdTe epilayers, respectively. The trapping times of the minority carriers were significantly reduced by the hydrogenation treatment.

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Mavzular

Advanced Semiconductor Detectors and Materials Chalcogenide Semiconductor Thin Films Electron and X-Ray Spectroscopy Techniques

Identifikatorlar

DOI: 10.1063/1.370815

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