AlGaAsSb lasers emitting in the 1.6 μm region
T. N. DanilovaA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgB. E. ZhurtanovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. N. ImenkovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgM. A. SipovskayaA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgYu. P. YakovlevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
ABI
Annotatsiya
AlGaAsSb lasers with different Al concentrations in the active and confinement regions are fabricated and investigated. The structures lase in the region ∼1.6 μm. The AlGaAsSb solid solution in the active region is a direct-gap material with a small energy separation (∼56 meV) between the direct-gap Γ minimum and the indirect-gap L minimum of the conduction band. The lasers have a single-mode spectrum with a predominant longitudinal mode in the spatial distribution of the emission. The lasers operate at room temperature in a pulsed mode.
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