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Oscillations in the induced photopleochroism of In(Au)/Si thin-film structures

V. M. BotnaryukUniversity of Moldova, MD 20009, Kishinev, MoldovaYu. V. ZhilyaevPhysicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, RussiaYu. V. RudPhysicotechnical Institute, Russian Academy of Sciences, St. Petersburg, RussiaV. Yu. Rud’St. Petersburg State Technical University, 195251, St. Petersburg, Russia

Semiconductorsjournal1999en

ABI

Annotatsiya

The fabrication of photosensitive In(Au)/Si barrier-contact structures is described and the photoelectric behavior of these structures upon exposure to linearly polarized light incident obliquely on the barrier-contact side is investigated. Oscillations are observed in the spectral dependences of the photoconversion quantum efficiency and induced photopleochroism. The oscillations are explained by interference of the linearly polarized light in the thin silicon films.

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Mavzular

Silicon Nanostructures and Photoluminescence Semiconductor materials and interfaces Force Microscopy Techniques and Applications

Identifikatorlar

DOI: 10.1134/1.1187705

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