Maqola

n(p)-InP-n-In2O3-P2O5-Pd diode structures as potential sensors for near-infrared radiation, moisture, and hydrogen

S. V. SlobodchikovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgХ. М. СалиховA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

Technical Physics Lettersjournal1999en

ABI

Annotatsiya

Diode structures based on n(p)-InP with intermediate n-In2O3 and P2O5 layers were fabricated by electrochemical deposition of Pd. It is shown that when exposed to pulses of water vapor the photo-emf of the structures varies by 60–400% and in the presence of H2 it can vary by 1.5–2 orders of magnitude. These n(p)-InP-n-In2O3-P2O5-Pd structures are potential sensors for near-infrared radiation, moisture, and hydrogen.

Mavzular

Optical and Acousto-Optic Technologies Infrared Target Detection Methodologies Gas Sensing Nanomaterials and Sensors

Identifikatorlar

DOI: 10.1134/1.1262708

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