Formation of radiation defects in silicon structures under low-intensity electron irradiation
Sh. MakhkamovInstitute of Nuclear PhysicsN.A. TursunovInstitute of Nuclear Physics of Uzbekistan Academy of Sciences, 702132 Tashkent, UzbekistanM. AshurovInstitute of Nuclear Physics of Uzbekistan Academy of Sciences, 702132 Tashkent, UzbekistanR.P. SaidovInstitute of Nuclear Physics of Uzbekistan Academy of Sciences, 702132 Tashkent, UzbekistanZ. M. KhakimovInstitute of Nuclear Physics of Uzbekistan Academy of Sciences, 702132 Tashkent, Uzbekistan
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Formation of A-centres and divacancies in silicon p+-n-n+ structures was investigated for 4 MeV electron irradiation in the low-intensity range of 1011-5×1012 cm-2 s-1. It is shown that the introduction rates of both A-centres and divacancies increase with intensity in this range and then saturate at intensities above 1012 cm-2 s-1. Using the data from the literature the introduction rates of these defects are discussed in a wide range of intensities of electron irradiation of 1011-1015 cm-2 s-1, indicating a consistent role of carbon interstitial atoms and electron-enhanced migration of Si self-interstitials in the observed behaviour of introduction rates.
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