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Ish: Influence of the Post-Diffusion Hardening Rate and Thermal Treatment on the Thermal Stability of the Charge-Carrier Lifetime in Overcompensated n-Si<B, S>

  1. Thermal emission and capture of electrons at sulfur centers in silicon

    Laurence Rosier, C. T. Sah

    Maqola19712 iqtibos
    ABI
  2. Sarlavhasiz

    Boshqa1 iqtibos
    ABI
  3. Sarlavhasiz

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    ABI