Effect of additional nonmagnetic acceptor doping on the resistivity peak and the Curie temperature of Ga1−xMnxAs epitaxial layers
Sh. U. YuldashevQuantum Functional Semiconductor Research Center, Dongguk University, 3-26 Pil-dong, Chung-ku, Seoul 100-715, KoreaHyunsik ImQuantum Functional Semiconductor Research Center, Dongguk University, 3-26 Pil-dong, Chung-ku, Seoul 100-715, KoreaVadim Sh. YalishevQuantum Functional Semiconductor Research Center, Dongguk University, 3-26 Pil-dong, Chung-ku, Seoul 100-715, KoreaC. S. ParkQuantum Functional Semiconductor Research Center, Dongguk University, 3-26 Pil-dong, Chung-ku, Seoul 100-715, KoreaTae-Won KangQuantum Functional Semiconductor Research Center, Dongguk University, 3-26 Pil-dong, Chung-ku, Seoul 100-715, KoreaSang‐Hoon LeeDepartment of Physics, Korea University, Seoul, Korea, 136-701Yuji C. SasakiDepartment of Physics, University of Notre Dame, Notre Dame, Indiana 46556X. LiuDepartment of Physics, University of Notre Dame, Notre Dame, Indiana 46556J. K. FurdynaDepartment of Physics, University of Notre Dame, Notre Dame, Indiana 46556
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We have investigated the effect of additional doping by Be on the properties of Ga1−xMnxAs (x=0.03). For this relatively low value of x, the Curie temperature is observed to increase with increasing Be concentration. We show that the temperature dependence of the resistivity at zero magnetic field, including the resistivity maximum near the Curie temperature, can be successfully described by the magnetoimpurity scattering model proposed by Nagaev [Phys. Rep. 346, 387 (2001)] in both the paramagnetic and the ferromagnetic temperature regions. Quantitative analysis of the data in terms of this model yields the value of the p–d exchange energy |N0β|≈1.6 eV for Ga0.97Mn0.03As.
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